The authors report the development of aλ~4.1μm quantum cascade laser grown by metal-organic chemical vapor deposition using strain-balanced In Ga As/In Al As materials.A device with a 7.5 mm cavity length and 6.5μm...The authors report the development of aλ~4.1μm quantum cascade laser grown by metal-organic chemical vapor deposition using strain-balanced In Ga As/In Al As materials.A device with a 7.5 mm cavity length and 6.5μm ridge width,bonded to an aluminum nitride heatsink,achieves maximum output powers of 3.4 W at 288 K in pulsed mode and 1.6 W at288 K in continuous-wave(CW)operation,with corresponding maximum wall-plug efficiencies of 14.8%and 9.3%.A kink is observed in the power–current curve under CW operation,which is absent in pulsed operation.Near-field results show that in CW operation,the horizontal beam quality factor M2fluctuates with current,indicating mode instability and highorder lateral mode excitation,while in pulsed mode,the horizontal M2remains stable around 1.3 as the current increases from 1.4 A to 1.9 A.展开更多
文摘The authors report the development of aλ~4.1μm quantum cascade laser grown by metal-organic chemical vapor deposition using strain-balanced In Ga As/In Al As materials.A device with a 7.5 mm cavity length and 6.5μm ridge width,bonded to an aluminum nitride heatsink,achieves maximum output powers of 3.4 W at 288 K in pulsed mode and 1.6 W at288 K in continuous-wave(CW)operation,with corresponding maximum wall-plug efficiencies of 14.8%and 9.3%.A kink is observed in the power–current curve under CW operation,which is absent in pulsed operation.Near-field results show that in CW operation,the horizontal beam quality factor M2fluctuates with current,indicating mode instability and highorder lateral mode excitation,while in pulsed mode,the horizontal M2remains stable around 1.3 as the current increases from 1.4 A to 1.9 A.
