We investigate mosaic structure evolution of GaN films annealed for a long time at 800℃ grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show th...We investigate mosaic structure evolution of GaN films annealed for a long time at 800℃ grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films is relaxed by generating edge-type threading dislocations （TDs） instead of screw-type TDs. Compared to as-grown GaN films, the annealed ones have larger mean twist angles corresponding to higher density of edge-type TDs but smaller mean tilt angles corresponding to lower density of screw-type TDs films. Due to the increased edge-type TD density, the lateral coherence lengths of the annealed GaN films also decrease. The results obtained from chemical etching experiment and grazing-incidence x-ray diffraction （GIXRD） also support the proposed structure evolution.展开更多
Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high sa...Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.展开更多
基金This project has been subsidized by Laboratory of Internal Friction & Defects in Solid, of Institute of Solid State Physics and the University of Science & Technology of China, Academia Sinica, Hefei, China.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60376005, 60577030, 60325413, and 60444007.
文摘We investigate mosaic structure evolution of GaN films annealed for a long time at 800℃ grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films is relaxed by generating edge-type threading dislocations （TDs） instead of screw-type TDs. Compared to as-grown GaN films, the annealed ones have larger mean twist angles corresponding to higher density of edge-type TDs but smaller mean tilt angles corresponding to lower density of screw-type TDs films. Due to the increased edge-type TD density, the lateral coherence lengths of the annealed GaN films also decrease. The results obtained from chemical etching experiment and grazing-incidence x-ray diffraction （GIXRD） also support the proposed structure evolution.
基金supported by the National Basic Research Program of China(Grant Nos.2011CBA00600,2011CBA00601,and 2013CBA01604)the National Natural Science Foundation of China(Grant No.60625403)the National Science and Technology Major Project of China(Grant No.2011ZX02707)
文摘Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.
