摘要
为满足现代X射线应用和设计电子加速器的靶结构和束流参数的需要,采用MCNP4B程序对2～20MeV能量范围内的电子束入射不同厚度钨靶的X射线发射率进行了系统的模拟计算和研究。结果表明在电子能量小于10MeV时,MCNP4B的结果与NCRP-51报告一致,但在10MeV以上,它们间的差别增大。该文结果对早期NCRP-51报告的结果有重要的改进,对于现代产生X射线的电子加速器靶的设计具有参数作用。
To satisfy the needs in the use of X-ray and the design of the target used in electron accelerators X-ray emissions produced by 2 - 20 MeV electrons hitting tungsten targets with different thicknesses were modeled with the MCNP4B code to improve the design of the target structure and electron beam parameters in modern X-ray applications. The results show that the MCNP4B predictions agree well with the data from NCRP (National Council on Radiation Protection and Measurements) Report No. 51 for electron energies below 10 MeV. The differences increases at higher energy. The results provide an important addition to NCRP Report No. 51, offering a series of specific parameters for the design of targets in electron accelerators.
出处
《清华大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2004年第3期304-306,共3页
Journal of Tsinghua University(Science and Technology)
基金
国家自然科学基金 (10135040)
