摘要
本文报道了用微波等离子体化学气相淀积(MP—CVD)技术从 SiH_4+H(?)进行 a-Si∶H 薄膜的高速淀积研究。对淀积参数对淀积行为的影响、淀积膜的结构性能也进行了研究。研究表明,在保证材料具有一定质量的前提下,用该技术能达到高达30μm/h 的淀积速率,且淀积效率达到近100%。
A microwave plasma chemical vapor deposition method was used to deposit a-Si:H films at high rate.The influence of deposition parameter upon the depositionand the structure of the deposited films was studied.It showed that this methodcould achieve a deposition rate as high as 100(?)/s with the deposit of fairly goodquality,and the deposition efficiency was found to be nearly 100%.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第2期221-228,共8页
Journal of Inorganic Materials
关键词
淀积
氢化
硅
薄膜
太阳能
电池
a-Si
H
High rate deposition
Microwave plasma CVD
