摘要
Non-Hermitian topological insulators have attracted considerable attention due to their distinctive energy band characteristics and promising applications.Here,we systematically investigate non-Hermitian Möbius insulators and graphene-like topological semimetals from the projected symmetry and realize their corresponding topological phenomena in an electric circuit-based framework.By introducing a nonreciprocal hopping term consisting of negative impedance converters into a two-dimensional electric circuit,we establish an experimental platform that effectively demonstrates that introducing non-Hermitian terms significantly enhances the energy localization of topological edge states,which originate from the non-Hermitian skin effect.Furthermore,a thorough comparison of experimental measurements with numerical simulations validates the robustness and reliability of our electric circuit structure.This work not only reveals the physical properties of non-Hermitian topological materials but also provides valuable theoretical and experimental guidance for the implementation of topological circuits and the design of radiofrequency devices in the future.
基金
supported by the Fundamental Research Funds for the Central Universities(No.2023ZDYQ11003)
the China Postdoctoral Science Foundation(No.2023M743784)
the State Key Laboratory of Millimeter Waves(No.K202407)
the National Natural Science Foundation of China(No.12274315)
the Postgraduate Innovation Program of China University of Mining and Technology(No.2024WLJCRCZL298).
