摘要
提升全无机溴化铯铅钙钛矿量子点(CsPbBr_(3) PeQDs)的稳定性对改进其相关器件性能至关重要。采用配体辅助再沉淀法在常温条件下制备了系列Zn^(2+)掺杂CsPbBr_(3) PeQDs样品,实现了520~513 nm的光谱调谐,较未掺杂的CsPbBr_(3)样品,其光致发光(photoluminescence,PL)强度提升了63%。在超疏水二氧化硅气凝胶(aerogels,AGs)上原位生长PeQDs制备了CsPbBr_(3):Zn/AGs复合样品。AGs形成的保护基质有效地保护了CsPbBr_(3) PeQDs与环境中的光照、氧气等不利因素的接触。室温条件下20 d后复合样品的PL强度下降17%,紫外灯持续照射120 min后,PL强度仅降低14%。Zn^(2+)掺杂与AGs封装的协同作用显著提升了CsPbBr_(3)量子点的光学性能与环境稳定性,使其更好地满足实际应用的需求,推动其在光电子学领域的发展。
Improving the stability of all-inorganic cesium bromide-lead perovskite quantum dots(CsPbBr_(3) PeQDs)is of great importance in terms of enhancing the device performance and expanding their application areas.A series of Zn^(2+)doped CsPbBr_(3) PeQDs samples were prepared by ligand-assisted reprecipitation method at room temperature,and the spectral tuning of 520~513 nm was realized.Their photoluminescence(PL)intensity could be enhanced by 63%compared to the undoped CsPbBr_(3) samples.Subsequently,CsPbBr_(3):Zn/AGs composite samples were prepared by in situ growth of PeQDs on superhydrophobic silica aerogels(aerogels,AGs).CsPbBr_(3) PeQDs were effectively protected from exposure to unfavorable factors such as light and oxygen in the environment by the protective matrix formed by AGs,and the PL intensity of the composite samples was decreased by 17%at room temperature for 20 days,and only 14%under the continuous action of ultraviolet light for 120 min.The synergistic effect of Zn^(2+)doping and AGs encapsulation significantly enhances the optical properties and environmental stability of CsPbBr_(3) quantum dots,enabling them to better meet the requirements of practical applications and promoting their development in the field of optoelectronics.
作者
朱学友
董其铮
ZHU Xueyou;DONG Qizheng(School of Materials Science and Engineering,Lanzhou University of Technology,Lanzhou 730050,Gansu,China)
出处
《陕西师范大学学报(自然科学版)》
2026年第2期117-124,共8页
Journal of Shaanxi Normal University:Natural Science Edition
基金
甘肃省科技重大专项(22ZD6GA008)
中央领导地方科技发展资金项目(2023-0401-0076)。
