摘要
掺杂多晶硅/氧化硅(poly-Si/SiO_(x))钝化接触是目前达到较高效率的太阳电池的重要结构,常用化学气相沉积(CVD)方法进行多晶硅薄膜的制备,但制备过程伴随着有毒气体和工艺繁杂等方面的制约。本文提出一种更安全且简单的共溅射方法制备掺杂多晶硅薄膜的物理沉积(PVD)技术。利用扫描电子显微镜(SEM)观察硅薄膜的表面形貌并计算平均晶粒尺寸,通过拉曼光谱(Raman)和霍尔效应(Hall Effect)测试对不同工作压强下制备出的硼掺杂多晶硅/氧化硅(p+-poly-Si/SiO_(x))钝化接触结构进行材料的表征。研究结果表明:在0.5Pa的工作压强下制备出的样品表现出了2.04mΩ·cm^(2)的最低接触电阻率、5.4×10^(19)cm^(-3)的最大载流子浓度、最平滑致密的表面形貌、54%的最佳的结晶率和21nm的平均晶粒尺寸。
The passivation contact of doped polycrystalline silicon/silicon oxide(poly-Si/SiO_(x)) prepared at present is an important structure to achieve solar cells with high efficiency,and the chemical vapor deposition(CVD)method is commonly used to prepare poly-Si thin films.However,the preparation of limited by the toxic gases and complex processes.In this paper,a safer and simpler co-sputtering method for the physical deposition(PVD)of doped poly-Si films is proposed.Scanning electron microscopy(SEM)was used to observe the surface morphology of the films and calculate the average grain size.The prepared boron-doped poly-Si/SiO_(x) passivated contact structure was characterized by Raman spectroscopy and Hall effect measurements.The sample prepared at working pressure of 0.5 Pa.exhibited the lowest contact resistivity of 2.04 mΩ·cm^(2),the maximum carrier concentration of 5.4×10^(19) cm^(-3),the smoothest surface morphology,the optimum crystallization rate of 54%and an average grain size of 21 nm.
作者
王玉超
杜朋轩
盛之林
黄康
范占军
Wang Yuchao;Du Pengxuan;Sheng Zhilin;Huang Kang;Fan Zhanjun(Ningxia Research Center of Silicon Target and Silicon-Carbon Negative Materials Engineering Technology,School of Materials Science and Engineering,North Minzu University,Ningxia,750021;Ningxia Polytechnic,Ningxia,750021;Ningxia Gaochuangte Energy Technology Co.,Ltd.,Ningxia,750021)
出处
《当代化工研究》
2022年第22期39-41,共3页
Modern Chemical Research
基金
2022年宁夏回族自治区重点研发计划项目“半导体多晶硅环套切技术及应力缺陷研究”(项目编号:2022BDE03004)。
关键词
磁控溅射
工作压强
钝化接触
晶粒尺寸
光电性能
magnetron sputtering
pressure
passivating contacts
grain size
photoelectric performance
