摘要
压接型绝缘栅双极型晶体管(IGBT)内部存在多层接触界面,为研究界面间接触热阻对器件整体热特性的影响,建立了考虑接触热阻的压接型IGBT热仿真模型。通过建立压接型IGBT器件结构场模型计算器件内各接触层的接触压力分布,使用Bahrami塑性接触热阻模型计算微接触热导;通过测量不同流速时器件结到环境的瞬态热阻抗曲线,验证了热仿真模型;并以该模型为基础,研究了压装力对器件热特性的影响。压装力为70 kN时,压接型IGBT器件内接触热阻占器件热阻的24%;器件压装力增大会使界面上接触热阻减小,器件整体热阻降低,且热阻变化量也会降低;器件在其标定压装力范围(60～90kN)内,器件热阻值变化在0.8%以内。
Multilayer contact interface exists in press pack insulated gate bipolar transistor（IGBT）.To investigate the influence of thermal contact resistance on thermal properties in press pack IGBT,a simulation model taking thermal contact resistance into account is developed.In this model,the contact pressure distribution of each contact layer in the device is calculated by building mechanical finite element model of press pack IGBT.And with the use of Bahrami plastic contact thermal resistance model,the micro-contact thermal contact conductance can be predicted.This model is validated by measuring the transient thermal impedance curve of the junction to the environment at different flow rates.Based on the model,the effect of clamping force on the thermal impedance of press pack IGBT is also discussed.The results show that thermal contact resistance accounts for 24% of the device＇s thermal resistance when the clamping force is 70 kN.With the increase of clamping force,the thermal contact resistance and its variation are decreased.The thermal resistance of the device changes within 0.8% of its nominal mounting force from 60 kN to 90 kN.
作者
董国忠
窦泽春
刘国友
陆金辉
DONG Guo-zhong;DOU Ze-chun;LIU Guo-you;LU Jin-hui(Zhuzhou CRRC Times Electric Co.,Ltd.,Zhuzhou 412001,China)
出处
《电力电子技术》
CSCD
北大核心
2018年第8期34-37,44,共5页
Power Electronics
基金
国家重点研发计划(2016YFB0901802)~~
关键词
绝缘栅双极型晶体管
压接型
接触压力
模型
热阻
insulated gate bipolar transistor
press pack
contact pressure
model
thermal resistance
