摘要
空间辐射环境能够引起半导体集成电路发生的总剂量效应、单粒子效应等辐射效应 ,可以被用来进行空间辐射环境监测。在一定条件下 ,基于此原理的探测器具有常规的面垒型探测器以及 PIN型探测器等所不具备的优点。尤其适合航天器舱内带电离子探测和用于航天医学的个人辐射剂量探测。介绍了三种基于半导体器件辐射效应的探测器。
Radiation effects in Si ICs , such as total dose effect, single event effect , et al., can be utilized to measure space radiation environment. Detectors based on these effects have some advantages compared with conventional semiconductor detectors ( barrier detector and P-I-N diode) as dose depth monitor in spacecraft and 'skin' dosimeter for personnel. Three of these kinds of detectors and their uses in space are introduced in this paper.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2002年第4期374-376,共3页
Nuclear Electronics & Detection Technology
基金
国家自然科学基金 (19775 0 5 8
10 0 75 0 6 4 )
中国科学院"九五"重大课题 (KJ95 2 - SI-4 2 3)
