摘要
对 Hefner的 IGBT模型静态部分进行了详细的理论分析 .由于 IGBT中含有宽基极、低增益的晶体管 ,因此采用双极性传输方程来描述 IGBT电流 .而 MOSFET的静态线性区和饱和区的特性也用于表示阳极电压 .并用 MATL AB实现 I-
An analytical model for IGBT(Hefner's IGBT model) is described in this paper in detail.A wide base,low gain BJT is contained in IGBT,so the bipolar theory is used to describe the current of IGBT. The linear and saturate portion of MOSFET static state behavior is also included. Matlab is used to implement the static IV characteristics of IGBT.
