摘要
采用射频等离子体增强化学气相沉积（ＣＶＤ）＋负偏压热丝辅助方法直接在Ｓｉ（１００）衬底上制备了多晶Ｃ３Ｎ４薄膜．Ｘ射线衍射测试表明，薄膜同时含有α－和βＣ３Ｎ４晶相以及未知结构，没有观测到石墨衍射峰．利用扫描电子显微镜观测到线度约２μｍ、横截面为六边形的β－Ｃ３Ｎ４晶粒．纳米压痕法测得薄膜的硬度达７２．６６ ＧＰａ．
Polycrystalline carbon nitride thin films were prepared on Si (100) by hot filament assisted rf plasma-enhanced chemical vapor deposition with negative bias methods. X-ray diffraction (XRD) spectra indicate that the obtained CN films contain both crystalline beta -C3N4 and beta -C3N4, and a presently unknown structure. Some crystalline particles of 1 similar to2 mum in size with hexagonal cross section exist in the polycrystalline carbon nitride film. The maximum hardness of C3N4 thin film is 72.66GPa.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第2期377-380,共4页
Journal of Inorganic Materials
基金
国家自然科学基金资助项目!(19874007)
