摘要
报道了一个具有低噪声性能的 2～ 2 6GHzGaAs超宽带单片功率放大器的研究结果 ,介绍了模型提取、电路设计和单片制作的全过程 .放大器采用分布式设计 ,在超宽带频率范围内增益为 6 5± 0 5dB ,输入输出驻波比小于 2 0 .在 2～ 2 0GHz内测得输出功率大于 30 0mW ,噪声系数为 3 5～ 5 5dB .单片放大器包括所有匹配、隔直及偏置电路 ,芯片面积为 3 2mm× 1 2 75mm× 0 1mm .
This paper describes the modeling,design,fabrication and performance of a monolithic 2～26 GHz GaAs Power Amplifier with low noise characteristic.By using distributed circuit and series gate capacitors,the measured gain is 6 5±0 5dB with both in and out VSWR less than 2 0 in the broad band,and the measured output power is over 300 mW with 3.5～5.5dB noise figure in 2～20 GHz frequency range.The amplifier is truly monolithic,with all matching and biasing and DC block circuitry included on the chip.The chip size is 3.2mm×1.275mm×0.1mm.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2000年第11期140-142,共3页
Acta Electronica Sinica
