摘要
采用传输线模型测量了重B掺杂 p型金刚石薄膜 (约 10 2 0 cm-3 )上Ti/Au欧姆接触电阻率 ρc,测试了 5 0 0℃退火前后及大电流情况下的I V特性 ,研究了退火对 ρc 的影响 .结果表明 ,重掺杂和退火工艺是改善欧姆接触的有效手段 .ρc 随测试温度的变化表明金属 /半导体接触界面载流子输运机制为隧道穿透 .而光照对 ρc 影响的分析表明金刚石可作为理想窗口材料 .测试得到的最低 ρc 值约为 10 -4 Ωcm2 .
The measurements of the specific contact resistance ( ρ c) were carried out for Ti/Au ohmic contact to heavily boron\|doped p\|diamond (～10 20 cm -3 ) by the transmission line model (TLM). I\|V measurements were performed before and after annealing at 500℃,as well as in big current cases.The annealing effects on the ρ c value were investigated.It is shown that heavy doping of the semiconductor and annealing are effective means to improve ohmic contacts.The changes of ρ c value with the operating temperature are discussed.We suggest that the dominant transport mechanism at the metal/semiconductor interface is tunneling.No light effects on the ρ c value have been observed,the results show that diamond can be an ideal window material.In our experiments,the smallest ρ c value of the Au/Ti/p\|diamond reaches ～10 -4 Ωcm 2.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第7期1348-1351,共4页
Acta Physica Sinica
基金
国家自然科学基金! (批准号 :696760 0 5 )
