摘要
通过利用 TEM研究 Si Cp/ Al- Si复合材料发现 :Si C/ Al界面结合紧密 ,在靠近 Si C界面的 Al基体中 ,有一层厚度小于 1μm的“亚晶铝带”,它紧靠 Si C表面形成 ,与远离 Si C的 Al基体有几度的位向差 ;这种“亚晶铝带”在 Si C/ Al界面上普遍存在 ,其内有大量位错。
WT5BZ]SiC p/Al Si composites were studied by means of conventional TEM. It is discovered that a subgrain Al layer is usually observed at the Al side of a SiC/Al interface; the layer is less than 1μm thick and a few degrees crystallographically misoriented from the Al matrix, with high density of dislocation generated in it Its formation might be attributed to the localized strain caused by the difference between SiC and Al in thermal expansion coefficient
出处
《材料工程》
EI
CAS
CSCD
北大核心
2000年第3期8-10,共3页
Journal of Materials Engineering
