4CHOYKE W J, MATSUNAMI H ,PENSL G, et al.Silicon car- bide:recent major advances [ J ]. Materials Today, 2004, 7 (4) :57.
5YOSHIMOTO M, ARAKI R, KURUMI T, et al. Structure of directly bonded interfaces between Si and SiC[J]. ECS Transactions, 2013,50 ( 7 ) : 61 - 70.
6YUSHIN G N,SITAR Z.Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interfaces [ J ]. Applied Physics Letter, 2004,84 ( 20 ) : 3993- 3995.
7KING S W, NEMANICH R J, DAVIS R F. Dry ex situ cleaning processes for (0001) Si 6H-SiC surfaces articles [J].Journal of the Electrochemical Society, 1999, 146 (5) : 1910-1917.
8SIEBER N, MANTEL B F,SEYLLER T, et al.Hydrogenation of 6H-SiC as a surface passivation stable in air[ J] .Diamond and Related Materials,2001,10(3) : 1291-1294.
9LOSURDO M, BRUNO G, BROWN A, et al. Study of thetemperature-dependent interaction of 4H-SiC and 6H-SiC surfaces with atomic hydrogen [ J ]. Applied Physics Letter, 2004,84(20) :4011-4013.
10MASZARA W P, GOETZ G, CAVIGLI A, et al. Bonding of silicon wafers for silicon-on-insulator[ J ]. Journal of Applied Physics, 1988,64(10) :4943-4950.
