摘要
嵌入式存储器在SoC技术中逐渐成为主体设计结构,由于存储器存在成品率的问题,所以在存储器中设计了内建自测试和内建自修复的策略来解决,其中主要是:基于冗余行的修复策略、基于冗余列的修复策略和基于冗余字的修复策略,然而,在存储器中采用一维冗余块修复策略需要增加更多的冗余块,如果采用二维冗余块修复虽然提高了修复率,但是使得其稳定性和可靠性降低了,为此改进了一种基于DWL修复概念的策略,使其不仅保持了DWL结构的低功耗、提高了冗余资源的利用率,而且快速访问的特性,从而提高了存储器的故障修复率。
Embedded memory in the SoC technology gradually become main body design structure,due to the existence of the problem,memory rate was designed in storage so built-in test and built-in since the strategy to solve the repair,mainly：based on redundancy done repair strategy,based on redundancy column repair strategy and based on redundancy word repair strategy in memory,however,using one-dimensional redundant blocks repair strategy will take more redundant piece,if by 2-d redundant blocks repair increased even repair rate,but makes its stability and reliability,and therefore improve the reduced DWL repair concept based on the strategy,make it not only keep up DWL structure and low power consumption and improve the utilization rate of redundant,and the characteristics of quick access,thereby improving the memory of fault restoration rate.
出处
《电子测试》
2012年第1期13-18,89,共6页
Electronic Test
基金
山西省自然科学基金资助(项目编号:2010011031-1)
关键词
嵌入式存储器
内建自修复
内建自测试
Embedded memory
built-in self-repairing
built-in since test
