摘要
用等离子体增强化学气相淀积（ Ｐ Ｅ Ｃ Ｖ Ｄ）制备了氢化非晶硅薄膜（ａ Ｓｉ∶ Ｈ）并进行了退火实验， 利用红外吸收光谱（ Ｉ Ｒ）和金相显微镜研究薄膜中的氢含量及退火前后的脱氢现象， 得出材料组成及热稳定性对衬底温度 Ｔｓ 和射频功率 Ｐｒｆ 的依赖关系。
Hydrogenated amorphous silicon was deposited by PECVD, followed by annealing in vacuum The IR transmittance spectra were discussed regarding of SiH configuration and hydrogen content in the material Considering hydrogen release, metaloscope was used to observe the morphology of samples, which were deposited at different experimental condition and followed by annealing. It showed that such parameters as the substrate temperature(T s ) and radiofrenquency power(P rf ) can determine mostly the configuration of SiH and its thermal stability
出处
《液晶与显示》
CAS
CSCD
1999年第3期193-198,共6页
Chinese Journal of Liquid Crystals and Displays
基金
中国科学院院长基金
