摘要
通过分析半导体桥(Semiconductor Bridge,SCB)在相同电容不同电压下的电压电流曲线和桥面的烧蚀情况,研究了SCB的放电特性。实验发现:在相同电容下,随着充电电压的升高,SCB从无等离子体到有等离子体产生,且桥面的烧蚀程度增大。在低电压无等离子体时,电压和电流几乎同时断开;高电压产生等离子体时,由于等离子体是导体,在电压断开后电流持续一段时间断开。小电容放电时,其时间常数较小,较小的能量就可以将药剂点燃。
After analyzing the curves of voltage and current under same capacitance and different voltages as well as the ablation surface of semiconductor bridge（SCB）, it can be concluded that with the increase of voltage, the plasma generated at certaha voltage, and the ablation degree of SCB surface was increased. When there was no plasma generated, the voltage and current ended off at the same time. When the plasma generated under high voltage, the current ended off far behind voltage. The time constant r of capacitor is an important factor, it can determine the energy added on SCB. The less of r, the lower energy of SCB is needed.
出处
《火工品》
CAS
CSCD
北大核心
2010年第2期1-4,共4页
Initiators & Pyrotechnics
关键词
半导体桥
放电特性
电压电流曲线
Semiconductor bridge
Ignition character
Curve of voltage and current
