摘要
我们采用坩埚下降法,以高纯度的Bi、Sb(99.999％)为原料,在电阻加热炉内,真空度为10^(-2)mmHg,高纯度氩气保护下,生长出高均匀合金结构的无掺杂富铋N型Bi_(88)Sb_(12)合金单晶体。测试了Bi_(88)Sb_(12)晶体的性能,对生长中出现的问题进行了讨论。
High homogeneity N-type Bi_(88)Sb_(12) single crystals with perfectalloy structures were prepared by the Bridgman method using high purity(99.999%) Bi and Sb as raw materials. Growth conditions and property mea-surements are given, and some problems concerning the crystal growth ofBi_(88)Sb_(12) are discussed.
出处
《人工晶体学报》
EI
CAS
CSCD
1990年第3期208-211,共4页
Journal of Synthetic Crystals
