摘要
本文介绍用Monte Carlo模拟方法对入射He^+离子能量在0.1—2.OMeV范围内,硅、铝单晶在几种不同表面结构条件下的表面峰强度进行了计算。讨论了离子入射能量、入射角度、晶格原子热振动幅度、相关系数、表面增强因子、原子位移和吸附原子等因素对计算结果的影响。
The surface peak intensity for silicon and aluminium crystals has been studied for He+ ion incident energy ranging from 0.1 to 2.0 MeV by the Monte Carlo simulation method assuming a variety of surface structure models. The effects of He-+ ion incident energy and incident angle, thermal vibration amplitude, correlations of thermal vibrations, displacements and adsorption of surface atoms as well as enhancement factor on the surface peak intensity are investigated.
出处
《核技术》
CAS
CSCD
北大核心
1990年第2期91-97,共7页
Nuclear Techniques
关键词
表面峰
强度
蒙特卡罗法
模拟
弛豫
Surface peak intensity Monte Carlo simulation Shadow coneradius Reconstructed surface Relaxed surface
