摘要
提出了一个晶粒间界的物理模型,以解释多晶硅薄膜晶体管(TFT)的低载流子迁移率和高阈值电压.研制了多晶硅 TFT 的分析软件包TFTNPE,它包括两维数值模拟器和模型参数提取软件,可以用于多晶硅薄膜器件的分析与设计.
in this paper,a physical model of grain boundaries is presented to explain the low value of carrier mobility and the high value of threshold voltage for poly-silicon thin film transistors (TFT).A software package, called TFTMPE,is developed,which consists of a two dimensional numerical simulator and a model parameter extractor,it can be applied to the analysis and design of poly silicon TFT.
出处
《东南大学学报（自然科学版）》
EI
CAS
CSCD
1990年第4期53-59,共7页
Journal of Southeast University：Natural Science Edition
关键词
薄膜晶体管
多晶硅
模拟
polycrystal
silicon
thin film transistor simulation
analysis
