摘要
采用射频磁控溅射法在ITO／Coming1737玻璃基片上制备了用于无机EL绝缘层厚约700hm的Ba0.5-Sr0．5TiO3介电薄膜，研究了沉积温度和退火处理对薄膜介电性能的影响。实验表明，随着沉积温度的升高，薄膜的介电常数、介电损耗、正反向漏电流密度增加，击穿场强下降。对于在500℃下沉积的薄膜在550～700℃、1．8×10^-2Pa氧气氛中进行30min退火处理，结果发现在550℃和600℃下热处理介电损耗有所改善，其它参数都劣化；在650℃-700℃下热处理介电常数显著增加，其它性能都变差。
700-nm-thick Ba0.5Sr0.5TiO3 thin films for application in insulating layer of inorganic electroluminescent display are fabricated on ITO-coated Coming 1737 glass by rf magnetron sputter. The influence of substrate temperature and postannealing on the dielectric properties are investigated. With the increase of substrate temperature, the dielectric constant increases but the dielectric dissipation, the forward and reverse leakage current density all increase,while the breakdown strength decreases. The BST film deposited at 500℃ is postannealed at 550-700℃ and under an oxygen pressure of 1.8× 10^-2 Pa for 30 minutes. For the BST films annealed at 550 and 600℃, the dielectric dissipation is improved but the other dielectric parameters deteriorate; for the BST films annealed at 650 and 700℃, the dielectric constant enhances while the other dielectric properties degrade.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2006年第F05期351-353,共3页
Materials Reports
