摘要
本文用ＧＳＭＢＥ技术生长纯度ＧａＡｓ和δ－掺杂ＧａＡｓ／Ａｌ_ｘＧａ_（１－ｘ）Ａｓ结构二维电子气材料并对其电学性能进行了研究。对于纯度ＧａＡｓ的ＧＳＭＢＥ生长和研究，在低掺Ｓｉ时，载流子浓度为２×１０^（１４）ｃｍ^（－３），７７Ｋ时的迁移率可达８４，０００ｃｍ~２／Ｖ．ｓ。对于用ＧＳＭＢＥ技术生长的δ－掺杂ＧａＡｓ／Ａｌ_ｘＧａ_（１－ｘ）Ａｓ二维电子气材料，在优化了材料结构和生长工艺后，得到了液氮温度和６Ｋ迁移率分别为１７３，５８３ｃｍ~２／Ｖ．５和７．６７×１０~５ｃｍ~２／Ｖ．ｓ的高质量ＧａＡｓ／Ａｌ_ｘＧａ_（１－ｘ）Ａｓ二维电子气材料。
In this paper pure GaAs and δ-doped GaAs/AlGaAs two dimensional electron gas materials and their electrical properties were studied by GSMBE and Hall measurement.Pure GaAs materials were grown and measured at first.With slightly Si doping, the electron concentration of GaAs was 2 × 10￣(14)cm￣(-3) with 77K mobility of 84,000cm￣2/V.s.δ-doped GaAs/AlGaAs two dimensional electron gas was then investigated, and high quality materials were obtained with 77K and 6K mobilities of 174,583cm￣2/V.s and 7.67×10￣5cm￣2/V.s,respectively after the optimization of material structure and growth condition.
出处
《功能材料与器件学报》
CAS
CSCD
1996年第2期109-113,共5页
Journal of Functional Materials and Devices
基金
国家八五攻关项目
