摘要
提出了一种调制器与探测器集成的方案。它是在〈１００〉ｎ＋－Ｓｉ衬底上用外延、两次扩散等常规工艺先制作Ｓｉ脊形波导电光调制器，接着在调制器光输出端的波导上用分子束外延和反应离子刻蚀制作ｐ－Ｇｅ０．６Ｓｉ０．
A scheme of the integration of modulator and detector has been proposed.Fistly,Si rib waveguide electro-optic modulator is obtained on <100> n +-Si by conventional techniques such as epitaxy and two time diffusions.Secondly,on the output part of the waveguide,p-Ge 0.6 Si 0.4 /p-Si heterojunction detector is made by MBE and reactive ion etching.
出处
《半导体光电》
CAS
CSCD
北大核心
1996年第3期231-233,237,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金
关键词
集成光学
调制器
探测器
异质结
锗
硅
Semiconductor Devices,Integrated Optics,Modulator,Detector,Ge/Si Heterojunction
