摘要
通过精确求解一维定态薛定谔方程得到电子通过三角形势垒的隧穿几率,模拟了SiC肖特基接触的直接隧穿效应.结果显示该方法比WKB近似更精确,同时也更适合工作在高场条件下的SiC材料,并且能够连续地计算热电子发射电流和隧穿电流.
The direct tunneling effect in SiC Schottky contacts is simulated based on electron tunneling probabilities through a triangular barrier, which are accurately solved using the one-dimensional time-independent Schroedinger equation. The simulation results show that the proposed method has the advantages of greater accuracy and adaptability to SiC Schottky contacts in high fields over the WKB approximation. It also can seamlessly treat thermionic emission and tunneling current.
基金
国家自然科学基金资助项目(批准号:J60404250140)~~
