摘要
本文叙述等离子刻蚀铬膜的基本原理,用空气携带四氯化碳为气源,在高频电场作用下产生等离子体.实验证明,该等离子体能有效地刻蚀铬膜,获得较理想的微细图形.
The basic principle of plasma etching for Chrome masking is presented.Theplasma is produeed under high frequency by means oi CCl_4 and air as the gaseoussourcls.The results is given in detail.
关键词
等离子体
刻蚀
铬膜
Plasma
Etching
Chrome masking
