摘要
叙述了一个考虑包括速度过冲等短沟道效应的ＭＯＳＦＥＴ渡越时间解析模型，计算结果与二维数值模拟符合较好。基于该模型，探讨了在线性工作区和饱和工作区渡越时间对栅偏压依赖关系的不同，并作了物理解释。模型还表明由速度过冲带来渡越时间的缩短对沟道长度大于０．２５μｍ的ＭＯＳＦＥＴ不超过１０％
transit time model with complete closed form is developed for MOSFET, in which all the second order short channel effects including velocity overshoot are taken into account. The model agrees well with two-dimensional numerical simulation. Based on the model, the differences between the dependence of the transit time on the gate bias in linear region and that in saturation region are identified and explained physically. It is also identified that the reduction of transit time brought by velocity overshoot is less than 10% for devices with channel length greater than 0.25 μm.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1995年第2期142-148,共7页
Research & Progress of SSE
